Description
:
The opportunity
Are you an experienced semiconductor professional ready to lead cutting-edge R&D projects? Join our world-class team and help shape the future of power electronics through Silicon Carbide (SiC) technology. In this role, you’ll lead the development of next-generation power devices, combining technical depth with project leadership in a collaborative, innovation-driven environment.
How you’ll make an impact
1. Lead SiC power device development projects from concept to validation, managing timelines, risks, and resources
2. Drive technical activities in device design, process development, and integration
3. Collaborate across R&D, engineering, and quality teams to align goals and ensure project success
4. Apply structured problem-solving and data analysis to resolve technical challenges
5. Contribute to IP generation and stay connected with the global SiC semiconductor community
Your background
6. Master’s or PhD in engineering, physics, materials science, or a related field
7. Ideally 2 years of experience in the semiconductor industry—ideally in R&D, process integration, or device development
8. Solid understanding of semiconductor devices and fabrication processes; SiC experience is a strong plus
9. Strong analytical skills and familiarity with tools like SQL, JMP, or fab-floor systems
10. Excellent communication skills and a collaborative mindset
11. Fluent in English; German is a plus
More about us
We offer a unique opportunity to work in a high-tech environment with access to cutting-edge tools, flexible working conditions, and a culture that values innovation, mentorship, and continuous learning. You’ll be part of a team that’s redefining what’s possible in power electronics.
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