Description
:
The opportunity
Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.
How you’ll make an impact
1. Assist in the conceptual design and TCAD simulation of SiC power devices
2. Work with our experienced engineers to refine device structures and optimize performance
3. Predict electrical characteristics and validate simulation results
4. Analyze data, document findings, and present insights in team meetings
5. Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements
Your background
6. Master’s degree in Electrical Engineering, Physics, or Materials Science
7. Experience with TCAD tools, ideally in SiC device simulation
8. Understanding of SiC device physics
9. Basic knowledge of semiconductor fabrication processes
10. Strong analytical and data interpretation skills
11. Fluent in English with excellent communication skills
More about us
We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work.
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